Volume 6, Issue 3 (9-2006)                   IJPR 2006, 6(3): 221-221 | Back to browse issues page

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W. E. Pickett. High temperature superconductors at optimal doping. IJPR. 2006; 6 (3) :221-221
URL: http://ijpr.iut.ac.ir/article-1-61-en.html
Abstract:   (11894 Views)

  Intensive study of the high temperature superconductors has been ongoing for two decades. A great deal of this effort has been devoted to the underdoped regime, where the new and difficult physics of the doped Mott insulator has met extra complications including bilayer coupling/splitting, shadow bands, and hot spots. While these complications continue to unfold, in this short overview the focus is moved to the region of actual high-Tc, that of optimal doping. The focus here also is not on the superconducting state itself, but primarily on the characteristics of the normal state from which the superconducting instability arises, and even these can be given only a broad-brush description. A reminder is given of two issues,(i) why the “optimal Tc” varies,for n-layered systems it increases for n up to 3, then decreases for a given n, Tc increases according to the ‘basis’ atom in the order Bi, Tl, Hg (ii) how does pressure, or a particular uniaxial strain, increase Tc when the zero-strain system is already optimally doped?

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Type of Study: Research | Subject: General

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