Volume 14, Issue 2 (Iranian Journal of Physics Research, summer 2014)                   IJPR 2014, 14(2): 154-160 | Back to browse issues page

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Hajibadali A, Baghaei nejhad M, Farzi G. Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure. IJPR. 2014; 14 (2) :154-160
URL: http://ijpr.iut.ac.ir/article-1-1591-en.html
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University, Sabzevar, Iran , asgar.haji@gmail.com
Abstract:   (6480 Views)

In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC) emission. The parameters extracted from I-V characteristics were also calculated.

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Type of Study: Research | Subject: General

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