Volume 13, Issue 4 (Iranian Journal of Physics Research, winter 2014)                   IJPR 2014, 13(4): 421-429 | Back to browse issues page

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Yekta kiya Y, Rajaee E, Denesh Z. Effect of tunneling injection on the modulation response of quantum dot lasers. IJPR. 2014; 13 (4) :421-429
URL: http://ijpr.iut.ac.ir/article-1-1093-en.html
, hanifhadipour@gmail.com
Abstract:   (5200 Views)
In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling injection in QD laser increases the modulation bandwidth indicating that it is very useful for using in the fiber optic communication systems.
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Type of Study: Research | Subject: General

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