Volume 17, Number 3 ((Iranian Journal of Physics Research,summer 2017)                   IJPR 2017, 17(3): 457-463 | Back to browse issues page



DOI: 10.18869/acadpub.ijpr.17.3.457

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Asefpour M T, Sahebsara P. Transport in quantum dots resonant tunneling diodes in non-interacting regime. IJPR. 2017; 17 (3) :457-463
URL: http://ijpr.iut.ac.ir/article-1-2092-en.html

Department of Physics, Isfahan University of Technology, Isfahan, Iran , sahebsara@cc.iut.ac.ir
Abstract:   (421 Views)

In this paper, we used green's function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green's function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.

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Type of Study: Research | Subject: General

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