Volume 3, Number 3 (12-2002)                   IJPR 2002, 3(3): 247-253 | Back to browse issues page


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S. R, N. A. The effects of impurities on the band gap energy of CdS photoconductors. IJPR. 2002; 3 (3) :247-253
URL: http://ijpr.iut.ac.ir/article-1-241-en.html

Abstract:   (10108 Views)

  The basic requirements of the CdS thin films on their applications are high optical transparency, low electrical resistivity, and better crystalinity (e.g.high orientation). Firstly, we prepared CdS films by thermal eveporation techniques on glass substrate and then studied their photoconductivity from room temperature to 200 . Secondly, we prepared CdS films with impurities of Cu, Ag, Au and Al. In doped films with Cu, Ag and Au, we found CdS peak shifts towards lower energies. Our aim was to uas a new and initiative method for temerature and impurities effects on CdS photoconductors.

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Type of Study: Research | Subject: general

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