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<Article>
<Journal>
				<PublisherName>The Physics Society of Iran</PublisherName>
				<JournalTitle>Iranian Journal of Physics Research</JournalTitle>
				<Issn>1682-6957</Issn>
				<Volume>17</Volume>
				<Issue>3</Issue>
				<PubDate PubStatus="epublish">
					<Year>2019</Year>
					<Month>11</Month>
					<Day>26</Day>
				</PubDate>
			</Journal>
<ArticleTitle>Transport in quantum dots resonant tunneling diodes in non-interacting regime</ArticleTitle>
<VernacularTitle>Transport in quantum dots resonant tunneling diodes in non-interacting regime</VernacularTitle>
			<FirstPage>457</FirstPage>
			<LastPage>463</LastPage>
			<ELocationID EIdType="pii">1280</ELocationID>
			
<ELocationID EIdType="doi">10.18869/acadpub.ijpr.17.3.457</ELocationID>
			
			<Language>FA</Language>
<AuthorList>
<Author>
					<FirstName>M T</FirstName>
					<LastName>Asefpour</LastName>
<Affiliation></Affiliation>

</Author>
<Author>
					<FirstName>P</FirstName>
					<LastName>Sahebsara</LastName>
<Affiliation></Affiliation>

</Author>
</AuthorList>
				<PublicationType>Journal Article</PublicationType>
			<History>
				<PubDate PubStatus="received">
					<Year>2019</Year>
					<Month>11</Month>
					<Day>26</Day>
				</PubDate>
			</History>
		<Abstract>In this paper, we used green&amp;#39;s function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green&amp;#39;s function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.</Abstract>
			<OtherAbstract Language="FA">In this paper, we used green&amp;#39;s function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green&amp;#39;s function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.</OtherAbstract>
		<ObjectList>
			<Object Type="keyword">
			<Param Name="value">resonant tunnelling diode</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">Green function</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">quantum dots</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">transport</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">local density of states</Param>
			</Object>
		</ObjectList>
<ArchiveCopySource DocType="pdf">https://ijpr.iut.ac.ir/article_1280_da11e8cd1811acb79ccf0fd62cd58f86.pdf</ArchiveCopySource>
</Article>
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