The Physics Society of Iran Iranian Journal of Physics Research 1682-6957 17 3 2019 11 26 Tunneling conductance in a graphene-insulator-superconductor junction with Corbino disk structure. Tunneling conductance in a graphene-insulator-superconductor junction with Corbino disk structure. 485 489 1283 10.18869/acadpub.ijpr.17.3.485 FA Hosniye Khatami Elham Moomivand Babak Abdollahipour Ramin Mohammadkhani Journal Article 2019 11 26 We study tunneling conductance of a graphene based normal metal-insulator-superconductor (NIS) junction with Corbino disk structure. Solving Dirac-Bogolioubov- De Gennes (DBdG) equation in different regions of the junction and employing scattering approach we obtain normal and Andreev reflection coefficients of the junction. Using Blonder-Tinkham-Klapwijk (BTK) formula we calculate tunneling conductance of the junction as a function of the barrier strength of insulating region. The obtained results show that tunneling conductance of the junction oscillates as a function of the barrier strength as in the planar structure case. The tunneling conductance shows maximums at resonances which have a pi/2  phase shift with respect to the planar structure. We study tunneling conductance of a graphene based normal metal-insulator-superconductor (NIS) junction with Corbino disk structure. Solving Dirac-Bogolioubov- De Gennes (DBdG) equation in different regions of the junction and employing scattering approach we obtain normal and Andreev reflection coefficients of the junction. Using Blonder-Tinkham-Klapwijk (BTK) formula we calculate tunneling conductance of the junction as a function of the barrier strength of insulating region. The obtained results show that tunneling conductance of the junction oscillates as a function of the barrier strength as in the planar structure case. The tunneling conductance shows maximums at resonances which have a pi/2  phase shift with respect to the planar structure. https://ijpr.iut.ac.ir/article_1283_018b59ce1fd616d874afad0f44ba338d.pdf