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<ArticleSet>
<Article>
<Journal>
				<PublisherName>The Physics Society of Iran</PublisherName>
				<JournalTitle>Iranian Journal of Physics Research</JournalTitle>
				<Issn>1682-6957</Issn>
				<Volume>21</Volume>
				<Issue>2</Issue>
				<PubDate PubStatus="epublish">
					<Year>2021</Year>
					<Month>08</Month>
					<Day>23</Day>
				</PubDate>
			</Journal>
<ArticleTitle>Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎</ArticleTitle>
<VernacularTitle>Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎</VernacularTitle>
			<FirstPage>401</FirstPage>
			<LastPage>407</LastPage>
			<ELocationID EIdType="pii">1704</ELocationID>
			
<ELocationID EIdType="doi">10.47176/ijpr.21.2.39191</ELocationID>
			
			<Language>FA</Language>
<AuthorList>
<Author>
					<FirstName>Sh</FirstName>
					<LastName>Mahmoody</LastName>
<Affiliation>‎‎ ‎ Department of Physics, Payame Noor University of Tehran, Tehran, Iran</Affiliation>

</Author>
<Author>
					<FirstName>M</FirstName>
					<LastName>Akoundi</LastName>
<Affiliation>‎‎ ‎ Department of Physics, Payame Noor University of Tehran, Tehran, Iran</Affiliation>

</Author>
<Author>
					<FirstName>A</FirstName>
					<LastName>Shokri;</LastName>
<Affiliation>‎‎ ‎ Department of Physics, Payame Noor University of Tehran, Tehran, Iran</Affiliation>

</Author>
</AuthorList>
				<PublicationType>Journal Article</PublicationType>
			<History>
				<PubDate PubStatus="received">
					<Year>2019</Year>
					<Month>10</Month>
					<Day>05</Day>
				</PubDate>
			</History>
		<Abstract>In this paper a new method in design and modeling of infrared detector HgCdTe in photoconductive mode ‎is presented. In this method after scrutiny mechanical, optical, electrical properties of semiconductor ‎HgCdTe and solving the photoconductive equations, software of equations is programmed and with initial ‎value and repeat cycle, their changes to key parameters such as thickness, wavelength and amount of ‎impurities are calculated and finally, performance of detector is optimized.‎ Modeling of photoconductive detector has been done in temperature of 300K and 2-6 µm wavelength range‎‎, according to obtained results, optimal specific detectivity  is 3×10&lt;sup&gt;9&lt;/sup&gt; cmHz&lt;sup&gt;1/2&lt;/sup&gt;W&lt;sup&gt;-1&lt;/sup&gt;‎‏ ‏in 5.77 µm wavelength.‎ &lt;br /&gt; </Abstract>
			<OtherAbstract Language="FA">In this paper a new method in design and modeling of infrared detector HgCdTe in photoconductive mode ‎is presented. In this method after scrutiny mechanical, optical, electrical properties of semiconductor ‎HgCdTe and solving the photoconductive equations, software of equations is programmed and with initial ‎value and repeat cycle, their changes to key parameters such as thickness, wavelength and amount of ‎impurities are calculated and finally, performance of detector is optimized.‎ Modeling of photoconductive detector has been done in temperature of 300K and 2-6 µm wavelength range‎‎, according to obtained results, optimal specific detectivity  is 3×10&lt;sup&gt;9&lt;/sup&gt; cmHz&lt;sup&gt;1/2&lt;/sup&gt;W&lt;sup&gt;-1&lt;/sup&gt;‎‏ ‏in 5.77 µm wavelength.‎ &lt;br /&gt; </OtherAbstract>
		<ObjectList>
			<Object Type="keyword">
			<Param Name="value">low band gap semiconductor</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">HgCdTe</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">photoconductive</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">infrared detector</Param>
			</Object>
		</ObjectList>
<ArchiveCopySource DocType="pdf">https://ijpr.iut.ac.ir/article_1704_a588a6199feff5ba48402883d9b72700.pdf</ArchiveCopySource>
</Article>
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