The Physics Society of Iran Iranian Journal of Physics Research 1682-6957 24 3 2024 11 21 Simulation the effects of temperature and magnetic field on the density of surface states in semiconductor heterostructures Simulation the effects of temperature and magnetic field on the density of surface states in semiconductor heterostructures 69 74 3536 10.47176/ijpr.24.3.21845 FA Ulugbek Erkaboev Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan 0000-0002-6841-8214 Nosir Sharibaev Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan 0000-0002-6417-9973 Muzaffar Dadamirzaev 1. Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan 2..Namangan Engineering-Construction Institute, 160103, Namangan, Uzbekistan 0009-0003-4190-4612 Rustamjon Rakhimov Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan 0000-0003-0850-1398 Journal Article 2024 02 09 In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of the processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, whithin the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated. In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of the processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, whithin the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated. https://ijpr.iut.ac.ir/article_3536_291d43c696d8c3704cdbe0a72ade5f6c.pdf