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<Article>
<Journal>
				<PublisherName>The Physics Society of Iran</PublisherName>
				<JournalTitle>Iranian Journal of Physics Research</JournalTitle>
				<Issn>1682-6957</Issn>
				<Volume>11</Volume>
				<Issue>3</Issue>
				<PubDate PubStatus="epublish">
					<Year>2019</Year>
					<Month>11</Month>
					<Day>26</Day>
				</PubDate>
			</Journal>
<ArticleTitle>Construction and testing of a hydrogen cracking cell</ArticleTitle>
<VernacularTitle>Construction and testing of a hydrogen cracking cell</VernacularTitle>
			<FirstPage>335</FirstPage>
			<LastPage>335</LastPage>
			<ELocationID EIdType="pii">940</ELocationID>
			
			
			<Language>FA</Language>
<AuthorList>
<Author>
					<FirstName>F</FirstName>
					<LastName>Sahra Gard</LastName>
<Affiliation></Affiliation>

</Author>
</AuthorList>
				<PublicationType>Journal Article</PublicationType>
			<History>
				<PubDate PubStatus="received">
					<Year>2019</Year>
					<Month>11</Month>
					<Day>26</Day>
				</PubDate>
			</History>
		<Abstract>A UHV atomic hydrogen-cracking cell has been constructed to produce atomic hydrogen in order to perform in-situ cleaning of semiconductor samples. The cell was calibrated and tested with the objective of cleaning the III-V semiconductor samples such as GaAs. Mass spectroscopy studies during the atomic hydrogen cleaning of the GaAs samples revealed the chemical process of the hydrogen cleaning. X-ray Photoemission Spectroscopy (XPS) was also carried out on the samples at different stages of cleaning. Desorption of the native oxide from GaAs samples resulted in a smooth surface, which was confirmed by Reflection High Energy Electron Diffraction (RHEED).</Abstract>
			<OtherAbstract Language="FA">A UHV atomic hydrogen-cracking cell has been constructed to produce atomic hydrogen in order to perform in-situ cleaning of semiconductor samples. The cell was calibrated and tested with the objective of cleaning the III-V semiconductor samples such as GaAs. Mass spectroscopy studies during the atomic hydrogen cleaning of the GaAs samples revealed the chemical process of the hydrogen cleaning. X-ray Photoemission Spectroscopy (XPS) was also carried out on the samples at different stages of cleaning. Desorption of the native oxide from GaAs samples resulted in a smooth surface, which was confirmed by Reflection High Energy Electron Diffraction (RHEED).</OtherAbstract>
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