The Physics Society of Iran Iranian Journal of Physics Research 1682-6957 12 1 2019 11 26 Investigation of (111) wafers and comparison with (100) substrates Investigation of (111) wafers and comparison with (100) substrates 85 89 966 FA A Bahari Journal Article 2019 11 26  In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ultrathin films on both Si(100) and Si(111) substrates and studied their nanostructural properties to see the possibility of replacing Si(100) with Si(111). The obtained results indicate that Si(111) substrate with silicon nitride film on top is desirable.  In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ultrathin films on both Si(100) and Si(111) substrates and studied their nanostructural properties to see the possibility of replacing Si(100) with Si(111). The obtained results indicate that Si(111) substrate with silicon nitride film on top is desirable. https://ijpr.iut.ac.ir/article_966_4e0cb6fb5fb446d1c92ede2ed8780188.pdf