Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎

Mahmoody, Sh; Akoundi, M; Shokri;, A

doi:10.47176/ijpr.21.2.39191

Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎

Document Type : Original Article

Authors

Sh Mahmoody

M Akoundi

A Shokri;

‎‎ ‎ Department of Physics, Payame Noor University of Tehran, Tehran, Iran

https://doi.org/10.47176/ijpr.21.2.39191

Abstract

In this paper a new method in design and modeling of infrared detector HgCdTe in photoconductive mode ‎is presented. In this method after scrutiny mechanical, optical, electrical properties of semiconductor ‎HgCdTe and solving the photoconductive equations, software of equations is programmed and with initial ‎value and repeat cycle, their changes to key parameters such as thickness, wavelength and amount of ‎impurities are calculated and finally, performance of detector is optimized.‎ Modeling of photoconductive detector has been done in temperature of 300K and 2-6 µm wavelength range‎‎, according to obtained results, optimal specific detectivity is 3×10⁹ cmHz^1/2W^-1‎‏ ‏in 5.77 µm wavelength.‎

Keywords

low band gap semiconductor

HgCdTe

photoconductive

infrared detector

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