We have grown TiO2 and AlN under ultra high vacuum and high pressure conditions and studied their structures with using AES and SEM techniques. The obtained results show that an amorphous film of TiO2 and AlN could be formed on silicon substrate. Furthermore, TiO2 and AlN are high – K dielectric materials and they can thus be replaced to ultra thin gate oxide film.
A. Bahari, , K. Hasanzadeh, , M. Amir Sadeghi, and M. Roodbari, (2019). Growth and investigation of TiO2 and AlN nanostructureâs properties. Iranian Journal of Physics Research, 8(1), 1-7.
MLA
A. Bahari, , , K. Hasanzadeh, , , M. Amir Sadeghi, , and M. Roodbari, . "Growth and investigation of TiO2 and AlN nanostructureâs properties", Iranian Journal of Physics Research, 8, 1, 2019, 1-7.
HARVARD
A. Bahari , K. Hasanzadeh , M. Amir Sadeghi , M. Roodbari (2019). 'Growth and investigation of TiO2 and AlN nanostructureâs properties', Iranian Journal of Physics Research, 8(1), pp. 1-7.
CHICAGO
A. Bahari, K. Hasanzadeh, M. Amir Sadeghi and M. Roodbari, "Growth and investigation of TiO2 and AlN nanostructureâs properties," Iranian Journal of Physics Research, 8 1 (2019): 1-7,
VANCOUVER
A. Bahari , K. Hasanzadeh , M. Amir Sadeghi , M. Roodbari Growth and investigation of TiO2 and AlN nanostructureâs properties. Dear user; Recently we have changed our software to Sinaweb. If you had already registered with the old site, you may use the same USERNAME but you need to change your password. To do so at the first use, please choose, 2019; 8(1): 1-7.
