Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on the indium composition. In addition, we have shown that it is possible to control the interface band discontinuities by the introduction of an interlayer of Ge at the interface.
M. Oloumi, , C. C. Matthai, and T. H. Shen, (2019). Band offsets in strained layer superlattices. Iranian Journal of Physics Research, 4(3), 318-318.
MLA
M. Oloumi, , , C. C. Matthai, , and T. H. Shen, . "Band offsets in strained layer superlattices", Iranian Journal of Physics Research, 4, 3, 2019, 318-318.
HARVARD
M. Oloumi , C. C. Matthai , T. H. Shen (2019). 'Band offsets in strained layer superlattices', Iranian Journal of Physics Research, 4(3), pp. 318-318.
CHICAGO
M. Oloumi, C. C. Matthai and T. H. Shen, "Band offsets in strained layer superlattices," Iranian Journal of Physics Research, 4 3 (2019): 318-318,
VANCOUVER
M. Oloumi , C. C. Matthai , T. H. Shen Band offsets in strained layer superlattices. Dear user; Recently we have changed our software to Sinaweb. If you had already registered with the old site, you may use the same USERNAME but you need to change your password. To do so at the first use, please choose, 2019; 4(3): 318-318.
