Volume 12, Issue 2 (Iranian Journal of Physics Research, Summer 2012)                   IJPR 2012, 12(2): 163-167 | Back to browse issues page

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Abdollahi M, Talebian Darzi M, Hoseinkhani H, Baghbani Rizi H. The effect of electric field on an on-center hydrogenic impurity spherical quantum dot GaAs/AlAs. IJPR. 2012; 12 (2) :163-167
URL: http://ijpr.iut.ac.ir/article-1-1069-en.html
Abstract:   (10715 Views)

 In this research, the effect of the uniform electric field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot was studied using infinite potential model. In presence of strong electric field, due to the stark effect (perturbing electric field), the ground state energy would increase linearly. In presence of weak electric fields, the normalized binding energy was calculated by using perturbation method with effective mass approximation. This energy was investigated with respect to electric field strength. Studies show the proper choice of radius of quantum dot and electric field will clearly influence the normalized binding energy. The resulting influence may be used to calculate the small changes in quantum dot radius and thus detect different electric field strengths .

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Type of Study: Research | Subject: General

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