Volume 9, Issue 1 (8-2009)                   IJPR 2009, 9(1): 35-38 | Back to browse issues page

XML Persian Abstract Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Javanmard H, Akhavan M. Changes in the localization length with vanadium doping in the Gd123 structure. IJPR. 2009; 9 (1) :35-38
URL: http://ijpr.iut.ac.ir/article-1-378-en.html

Abstract:   (9705 Views)

  The normal state behavior of the Gd123 samples doped with vanadium has been studied. A metal-insulator transition in samples has been observed. The normal state resistivity has been compared with the variable range hoping model, which shows the 2D-VRH and CG having a better agreement for our samples. The localization length is calculated, which shows a decrease with doping, and for x=0.15 this drop is significant.

Full-Text [PDF 145 kb]   (1416 Downloads)    
Type of Study: Research | Subject: General

Add your comments about this article : Your username or Email:
Write the security code in the box

© 2015 All Rights Reserved | Iranian Journal of Physics Research

Designed & Developed by : Yektaweb

تحت نظارت وف بومی آسپا-وف