Volume 6, Issue 3 (9-2006)                   IJPR 2006, 6(3): 232-232 | Back to browse issues page

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Tohyama T. Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints. IJPR. 2006; 6 (3) :232-232
URL: http://ijpr.iut.ac.ir/article-1-71-en.html
, tohyama@imr.tohoku.ac.jp
Abstract:   (12238 Views)

  Asymmetric features of various physical quantities in the normal and superconducting states between hole- and electron-doped cuprate high-temperature superconductors have been an issue of debate for a long time. Their exploration is very important for the understanding not only of the mechanism of high-Tc superconductivity but also of the nature of doped-Mott insulators. Presented in this review is the present status of theoretical understanding of the electronic states in hole- and electron-doped high- Tc cuprates as well as the origin of the electron-hole asymmetry of the electronic states. In particular, it is shown that numerically exact diagonalization calculations for small clusters in a t-J model with long-range hoppings, t and t nicely reproduce the electron-hole asymmetry observed experimentally in various quantities and thus make it possible to extract the physical origin of the asymmetry. These results give a deep insight on the asymmetric behaviors in hole- and electron-doped high-Tc cuprates and on the nature of doped Mott insulators.

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Type of Study: Research | Subject: General

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