Volume 11, Issue 3 (Iranian Journal of Physics Research, Fall 2011)                   IJPR 2011, 11(3): 335-335 | Back to browse issues page

XML Persian Abstract Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Sahra Gard F. Construction and testing of a hydrogen cracking cell. IJPR. 2011; 11 (3) :335-335
URL: http://ijpr.iut.ac.ir/article-1-837-en.html
Sultan Qaboos University of Oman
Abstract:   (10902 Views)
A UHV atomic hydrogen-cracking cell has been constructed to produce atomic hydrogen in order to perform in-situ cleaning of semiconductor samples. The cell was calibrated and tested with the objective of cleaning the III-V semiconductor samples such as GaAs. Mass spectroscopy studies during the atomic hydrogen cleaning of the GaAs samples revealed the chemical process of the hydrogen cleaning. X-ray Photoemission Spectroscopy (XPS) was also carried out on the samples at different stages of cleaning. Desorption of the native oxide from GaAs samples resulted in a smooth surface, which was confirmed by Reflection High Energy Electron Diffraction (RHEED).
Keywords: DNA, semicondoctors, GaAs, MBE, XPS, RHEED
Full-Text [PDF 251 kb]   (2432 Downloads)    
Type of Study: Research | Subject: General

Add your comments about this article : Your username or Email:

© 2019 All Rights Reserved | Iranian Journal of Physics Research

Designed & Developed by : Yektaweb