In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling injection in QD laser increases the modulation bandwidth indicating that it is very useful for using in the fiber optic communication systems.
Yekta kiya,Y. , Rajaee,E. and Denesh,Z. (2019). Effect of tunneling injection on the modulation response of quantum dot lasers. Iranian Journal of Physics Research, 13(4), 421-429.
MLA
Yekta kiya,Y. , , Rajaee,E. , and Denesh,Z. . "Effect of tunneling injection on the modulation response of quantum dot lasers", Iranian Journal of Physics Research, 13, 4, 2019, 421-429.
HARVARD
Yekta kiya Y., Rajaee E., Denesh Z. (2019). 'Effect of tunneling injection on the modulation response of quantum dot lasers', Iranian Journal of Physics Research, 13(4), pp. 421-429.
CHICAGO
Y. Yekta kiya, E. Rajaee and Z. Denesh, "Effect of tunneling injection on the modulation response of quantum dot lasers," Iranian Journal of Physics Research, 13 4 (2019): 421-429,
VANCOUVER
Yekta kiya Y., Rajaee E., Denesh Z. Effect of tunneling injection on the modulation response of quantum dot lasers. Dear user; Recently we have changed our software to Sinaweb. If you had already registered with the old site, you may use the same USERNAME but you need to change your password. To do so at the first use, please choose, 2019; 13(4): 421-429.
