Stability of a positron lifetime measurement system, and investigation the types and concentrations of defects induced by10 MeV electron irradiation on n- and p-types Si

Tayebfard, E; Mehmandoost Khajeh Dad, A A; Khaghani, M; Jafarzadeh Khatibani, M; Poorsaleh, A M

doi:10.18869/acadpub.ijpr.15.1.34

Stability of a positron lifetime measurement system, and investigation the types and concentrations of defects induced by10 MeV electron irradiation on n- and p-types Si

Authors

E Tayebfard

A A Mehmandoost Khajeh Dad

M Khaghani

M Jafarzadeh Khatibani

A M Poorsaleh

https://doi.org/10.18869/acadpub.ijpr.15.1.34

Abstract

Positron annihilation lifetime spectroscopy method with valuation of non-destructive investigation of material, provides information about electron density, defect concentration, type of defects and atoms around the defects. The stability of the system was tested with a source. The time resolution of the whole system has been derived about 365 ps at FWHM. Then n- and p-type silicon samples were irradiated with a 10 MeV electron beam with dosage of 3, 12, and 30 kGy. Three components were fitted to the lifetime spectra using the PAScual program. The first component is related to the positron annihilation in the positron source which was obtained 186 ps. The second component is related to the positron annihilation lifetime in the sample bulk which was obtained 218 ps. The last lifetime component which is related to the positron annihilation in defect was small and sample dependent

Keywords

positron annihilation lifetime spectroscopy

electron irradiation

time resolution

crystalin defects

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