Transport in quantum dots resonant tunneling diodes in non-interacting regime

Asefpour, M T; Sahebsara, P

doi:10.18869/acadpub.ijpr.17.3.457

Transport in quantum dots resonant tunneling diodes in non-interacting regime

Authors

M T Asefpour

P Sahebsara

https://doi.org/10.18869/acadpub.ijpr.17.3.457

Abstract

In this paper, we used green's function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green's function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.

Keywords

resonant tunnelling diode

Green function

quantum dots

transport

local density of states

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