نویسندگان

پژوهشکده الکتروسرام، دانشگاه صنعتی مالک اشتر، شاهین شهر، اصفهان

چکیده

در این تحقیق ساختار نواری، خواص اپتیکی و طیف تابش گرمایی بلور فوتونیکی دوبعدی سیلیکونی حفره‌ای با ساختار شش گوشی محاسبه شده است. ساختار نواری، نقشه و اندازه گاف نواری به روش بسط امواج تخت بر حسب شعاع محاسبه شده است. برای این بلور فوتونیکی با ثابت شبکه a، بیشینه گاف قطبش‌های TE و TM و بیشینه گاف کامل به ترتیب 51%، 20% و 17% و مربوط به شعاع‌های a43/0 و a50/0 و a48/0 می‌باشد. با محاسبه طیف جذب به روش FDTD و با استفاده از قانون کیرشهف، طیف تابش گرمایی در ناحیه m 1µتا m 10µ محاسبه شده است. نتایج به دست آمده نشان می‌دهد که با تنظیم پارامترهای هندسی شبکه، می‌توان ساختار نواری بلور فوتونیکی سیلیکونی را مهندسی نمود و طیف تابش گرمایی را به نحوی کنترل نمود که در سیستم‌های ترموفوتوولتایی قابل استفاده باشد.

کلیدواژه‌ها

عنوان مقاله [English]

Band structure and thermal emission of two dimentional silicon photonic crystal

نویسندگان [English]

  • meysam daneshvar
  • Ali Rostamnejadi

چکیده [English]

In this research, we have studied the photonic band structure, optical properties and thermal emission spectrum of 2D Silicon photonic crystal with hexagonal structure. The band structure, band gap map and the gap size versus radius have been calculated by plane wave expansion method. The maximum band gap size of TE (TM) polarization and the complete gap size are 51% (20%) and 17% at air hole radius r=0.43a (0.50a) and r=0.48a, respectively. The optical properies have been calculated by FDTD methd in the range of 1 to 10 . The thermal emission spectrum has been obtained from absorption by Kirchhoff’s law. The obtaine results show that by engineering the band structure, the thermal emission spectrum of 2D Silicon photonic crystal can be controlled in a manner that can be used in thermophotovoltaic systems.

کلیدواژه‌ها [English]

  • Silicon Photonic crystal
  • band structure
  • band gap
  • Optical properties
  • thermal emission

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