Investigation of uniformity SiO2 thin film deposited by electron beam and thermal evaporation method

Shakouri, R; Haydari, H

doi:10.29252/ijpr.17.4.621

Investigation of uniformity SiO2 thin film deposited by electron beam and thermal evaporation method

Authors

R shakouri

H Haydari

https://doi.org/10.29252/ijpr.17.4.621

Abstract

In this paper, SiO2 thin film is produced by two methods: at the first method, SiO2 is evaporated by the electron gun and oxygen gas is injected to compensate for oxygen loss due to dissociation. At the second method, silicon monoxide is evaporated by thermal evaporation and during the evaporation time, substrate is bombarded by the ion oxygen that produced by an ion source. The refraction index, the extinction coefficient and the thickness layer are calculated by numerical method of the transmittance and reflectance equations. By the shift in the spectral transmittance, amount of non uniformity is calculated. Results show that if the quantity of the current and the ion energy are selected properly, SiO2 film will not have absorption. Moreover, SiO2 film produced by the second method is more uniform than that of by the first method

Keywords

Silicon Dioxide

Silicon Monoxide

Uniformity

refractive index

[1] R. Chow and N. Tsujimoto "Silicon dioxide and hafnium dioxide evaporation characteristics from a high-frequency sweep E-beam system," Appl. Opt. 35, 5095 (1996).
Society of America, 2004), paper WD1.
[2] F. Rainer, H.W. Lowdermilk, D. Milam, C.K. Carniglia, T. Tuttle Hart, T.L. Lichtenstein, Appl. Opt. 24 496 (1985).
[3] P. Baumeister, O. Arnon, Appl. Opt. 16 439 (1977).
[4] F. Rainer, D. Milam, W.H. Lowdermilk, NBS Spec. Publ. 638 339 (1981).
[5] E. Kobeda and E. Irene “A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si” J. Vac. Sci. Technol. B 4 720 (1986).
[6] K. Chen, X. Zhang and S. Lin “Intrinsic stress generation and relaxation of plasma-enhanced chemical vapor deposited oxide during deposition and subsequent thermal cycling” Thin Solid Films 434 190 (2003).
[7] M. Alvisia, G. Nunziob, M. Perroneb, A. Rizzoc, S. Scaglioned, and L. Vasanelli “Influence of the assisting-ion-beam parameters on the laser-damage threshold of SiO2 films” Thin Solid Films 338 269 (1999).
[8] www.eddyco.com
[9] P.J. Martin and R.P. Netterfield: “Ion-assisted deposition of magnesium fluoride films on substrates at ambient temperatures” Appl. Opt. 24, 1732 (1985).
[10] L. Dumas, E. Quesnel, F. Pierre, and F. Bertin, “Optical properties of magnesium fluoride thin films produced by argon ion-beam assisted deposition,” J. Vac. Sci. Technol. A. 20, 102 (2002).
[11] M.H.Fran Combe, R.W.Hoffman, Phys.ThinFilms, 6, 157 (1971).
[12] S.M. El-Sayed, Mater. Chem. Phys.78 262 (2002).
[13] Ortega, J. M. and W. C. Rheinboldt, “Iterative solution of nonlinear equations in several variables” Academic Press, New York, 572 (1970).
[13] A. Macleod, Thin Film Optical Filtes ,Fourth Edition, CRC Press (2004).
[14] Allgower, E. and K. Georg, Numerical continuation methods: an introduction, Springer- Verlag, New York, 1990, 388 pp.
[15] D. Faires and D. Burden “Numerical Methods”3 Edition Brooks Cole (2002).
[16] Kinosita K and Nishibori M 1969 Porosity of MgF2 films—evaluation based on changes in refractive index due to adsorption of vapors Journal of Vacuum Science and Technology 6 730–733.