Authors
Abstract
In this paper in order to achieve a suitable spectrometer for nuclear radiation detection at room temperature, effect of adding the element Hg to binary compound semiconductor ZnTe was studied completely. Electronic structure and transport properties of ternary compound semiconductor ZnxHg(1-x)Te (ZHT) simulated using ABINIT as a computational code based on density functional theory. According to this simulation the range of x≥0.8 was selected. This simulations including good response function compared to CdTe simulated by using MCNP as a computational code, shows that ZHT in the above range is a suitable nuclear spectrometer at room temperature.
Keywords
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[2] A Owens, A Peacock, “Compound semiconductor radiation detectors”, Nuclear Instruments and Methods in Physics Research A 531, (2004) 18–37
[3] J Seco, B Clasie, M Partridge, “Review on the characteristics of radiation detectors for dosimetry and imaging”, Phys. Med. Biol. 59 (2014) R303-R347
[4] S Tiwari, Compound Semiconductor, Device Physics, ISBN 0-12-691740-X, Academic press, (1992) 7-175
[5] T E Schlesingera, J E Toneyb, H Yoonc, E Y Leed, B A Brunettd, L Franksd, R B Jamesd, “Cadmium zinc telluride and its use as a nuclear radiation detector material”, Materials Science and Engineering, 32 (2001) 103-189
[6]A Rogalski, “Hg1-x Znx Te as a potential infrared detector material”, Prog. Quant. Electr., 13 (1989) 299-353
[7] C Jacoboni, “Theory of Electron Transport A Pathway from Elementary Physics to Nonequilibrium Green Functions”, springer, 1th edition, (2010) 127-206
[8] B eddine N Brahmi, A. Elhasnane Merad and S. Dergal, “Physical Bowing Parameters of ZnSxSe1-x Ternary Semiconductor from Ab Initio Study”, Journal of Materials Science and Engineering A 3, (2013) 192-199
[9] J W Nicklasa_ and John W. Wilkins, “Accurate ab initio predictions of III–V direct-indirect band gap crossovers”, APPLIED PHYSICS LETTERS 97, (2010) 091902-091920
[10] I Vurgaftmana, J R Meyer, “Band parameters for III–V compound semiconductors and their alloys”, JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 11, (2001) 5815-5875
[11] Y Kim, M Marsman, G Kresse, “Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors”, PHYSICAL REVIEW B 82, (2010) 205212-205250
[12] B V Olson, “Time-resolved measurements of charge carriers dynamics and optical nonlinearities in narrow band gap Semiconductors”, PHD thesis, University of Iowa (2013) 39-51
[13] X Gonze, B Amadon, P M Anglade, J M Beuken, F Bottin, P Boulanger, F Bruneval, D Caliste, R Caracas, M Côté, T Deutsch, L Genovese, Ph Ghosez, M Giantomassi, S Goedecker, D R Hamann, P Hermet, F Jollet, G Jomard, S Leroux, M Mancini, S Mazevet, M J T Oliveira, G Onida, Y Pouillon, T Rangel, G M Rignanese, D Sangalli, R Shaltaf, M Torrent, M J Verstraete, G Zerah, J W Zwanziger, :ABINIT: First-principles approach to material and nanosystem properties”, Computer Physics Communications, 180, (2009) 2582-2615
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