Document Type : Original Article


‎‎ ‎ Department of Physics, Payame Noor University of Tehran, Tehran, Iran


In this paper a new method in design and modeling of infrared detector HgCdTe in photoconductive mode ‎is presented. In this method after scrutiny mechanical, optical, electrical properties of semiconductor ‎HgCdTe and solving the photoconductive equations, software of equations is programmed and with initial ‎value and repeat cycle, their changes to key parameters such as thickness, wavelength and amount of ‎impurities are calculated and finally, performance of detector is optimized.‎ Modeling of photoconductive detector has been done in temperature of 300K and 2-6 µm wavelength range‎‎, according to obtained results, optimal specific detectivity  is 3×109 cmHz1/2W-1‎‏ ‏in 5.77 µm wavelength.‎


  1. M Strojnik, et al., Applied Optics 59, 17 (2020) AIT1.

  2. A Rogalski, et al., Applied Sciences 11, 2 (2021) 501.

  3. A Rogalski, et al., Opto-Electronics Review (2020) 107.

  4. M Masoudi, et al., Physica E: Low-dimensional Systems and Nanostructures 124 (2020) 114324.

  5. Z Abbasi Azad, et al., Materials Chemistry and Physics 257 (2021) 123483.

  6. Ch Junhao and Sh Arden, " Device Physics of Narrow Gap Semiconductors", Springer Science & Business Media‎ (2009) 341.

  7. H Koser, "Numerical modeling  and optimization of modeling of  HgCdTe infrared photodetector for thermal imaging".degree of Doctor of Philosophy, Electrical and Electronics Engineering Department, Middle East Technical University (2011).

  8. M Anne Itsuno, ," Bandgap -Engineered HgCdTe Infrared Detector Structures for Reduced Cooling Requirements". degree of Doctor of Philosophy, Electrical Engineering, University of Michigan (2012)

  9. م ح آخوندی، رسالة دکتری، دانشکدة فیزیک، دانشگاه تبریز (1382).

10. ب ج استرتیمن و همکاران، "فیزیک الکترونیک"، انتشارات دانشگاه علم و صنعت ایران (2006).

11. P Martyniuk and W Gawron, Journal of electronic material 42, 11 (2013) 3309.‎



ارتقاء امنیت وب با وف ایرانی