Enhancement of spontaneous emission and  material gain from CdSe/CdS quantum dot

Jabir, Jamal; Kadhim, Ghadeer

doi:10.47176/ijpr.22.3.61501

Enhancement of spontaneous emission and material gain from CdSe/CdS quantum dot

Document Type : Original Article

Authors

Jamal Jabir

Ghadeer Kadhim

Physics Department ,College of Education , University of Al-Qadisiyah , Diwaniyah , Iraq

https://doi.org/10.47176/ijpr.22.3.61501

Abstract

This study looks at the material gain and enhanced spontaneous emission of CdSe(1-x)S(x)/ZnS and CdSe(1-x)S(x)/ZnO quantum dot (QD) structures. (remove dot) cadmium selenide (CdSe) QDs, cadmium sulfide (CdS) wetting layer (WL), zinc oxide (ZnO) and zinc sulfide (ZnS) as a barrier layers were investigated to achieve QDs semiconductor with active region (B). The energy levels and band alignment between layers are predicted using the quantum disk model. Gain is an estimation for the transverse electric (TE) and magnetic (TM) modes in QDs structures, taking into consideration the momentum matrix element. The mole-fraction (x) and contributions of the barriers (ZnO and ZnS) material in enhanced gain and spontaneous emission were investigated in this manuscript. When ZnS is used as a barrier material, the spontaneous emission is found to be 11.75×10^19 (eV.sec.cm^3 )^(-1) at x~0.69 and wavelength 324 nm, and the material gain has maximum values of order 5.671×10^4 cm^(-2) for TM and 3.743×10^7for TE modes, respectively. Whenever the barrier is changed to ZnO, the results are different; at x~0.438 and wavelength 365 nm, the spontaneous emission becomes 2.965×10^19 (eV.sec.cm^3 )^(-1) and the gain has maximum values of order 2.118×10^4 cm^(-2) for TM and 1.242×10^5 cm^(-2)for TE mode.

Keywords

quantum dot

Spontaneous emission

Material gain

Wet layer

Barrier

Subjects

Theoretical

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