Document Type : Original Article
Authors
1 Laboratoire des Matériaux, des Énergies et de l’Environnement, University of Biskra 07000, Algeria
2 Department of Physics, University of El-Oued, 39000, Algeria
3 Mechanical Department, Faculty of Technology, University of El-Oued, El-Oued 39000, Algeria
Abstract
The main objective of this work is to investigate a new material based on fluorine doped NiO thin films by spray deposition technique. Nickel nitrate hexahydrate Ni(NO3)2.6H2O and ammonium fluoride (NHF4) with a ratio of F/Ni = 0.04 were used to prepare F doped NiO. The structural, optical and electrical properties of F doped NiO thin films were investigated with different NiO:F solution volumes of 5, 10, 15 and 20 ml using the spray technique. The prepared F doped NiO thin films have a monocrystalline nature with a cubic structure; the (111) diffraction peak is the preferred orientation; the maximum crystallite size is 19.21 nm obtained for 20 ml. The optical property shows that the all the prepared F doped NiO thin films have a good transmittance of about 80 % in the visible region. The F doped NiO thin films deposited with 20 ml have a minimum optical gap energy of 3.51 eV and the highest value of Urbach energy of 0,689 meV. However, the thin film prepared with 5 ml has a minimum electrical resistivity of 231 Ω.cm, which can be used as a gas sensing.
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