Anisotropic magnetoresistance in La0.4Pr0.3Ca0.3MnO3 thin films

Shahzamani, Zahra; Kameli, Parviz

doi:10.47176/ijpr.23.4.71724

Anisotropic magnetoresistance in La0.4Pr0.3Ca0.3MnO3 thin films

Document Type : Original Article

Authors

Zahra Shahzamani

Parviz Kameli

Department of physics, Isfahan University of Technology, Isfahan, Iran

https://doi.org/10.47176/ijpr.23.4.71724

Abstract

The paper presents a study on the magnetoresistance (MR) and anisotropic magnetoresistance (AMR) properties of La0.4Pr0.3Ca0.3MnO3 (LPCMO) thin films. The thin films were grown using pulsed laser deposition method on LaAlO3 (LAO) (111) and MgO (MGO) (100) substrates, with a thickness of approximately 90 nm as estimated by X-Ray reflectometry (XRR) method. The LPCMO sample on the LAO substrate exhibited a lower metal-insulation transition than the one on the MgO substrate due to high compressive stress. The MR was found to be 57% and 98% for LPCMO/LAO and the LPCMO/MGO films, respectively. The LPCMO/MGO sample also showed a significantly higher MR (80%) compared to LPCMO/LAO sample (32%), indicating its potential application.

Keywords

manganite

thin film

anisotropic magnetoresistance

Subjects

Magnetism

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