Iranian Journal of Physics Research

Simulation the effects of temperature and magnetic field on the density of surface states in semiconductor heterostructures

Document Type : Original Article

Authors

Ulugbek Erkaboev 1
Nosir Sharibaev 1
Muzaffar Dadamirzaev 2
Rustamjon Rakhimov 1

1 Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan

2 1. Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan 2..Namangan Engineering-Construction Institute, 160103, Namangan, Uzbekistan

https://doi.org/10.47176/ijpr.24.3.21845
Abstract
In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of the processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, whithin the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated.

Keywords

density of surface states
magnetic field
heterostructure
deep levels
capacitance-voltage characteristic
mathematical modeling
temperature
Subjects
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