Document Type : Original Article
Authors
1 Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan
2 1. Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan 2..Namangan Engineering-Construction Institute, 160103, Namangan, Uzbekistan
Abstract
In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of the processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, whithin the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated.
Keywords
- density of surface states
- magnetic field
- heterostructure
- deep levels
- capacitance-voltage characteristic
- mathematical modeling
- temperature
Main Subjects
- V V Tregulov, Math. Sci. 3, 23 (2012) 124.
- V V Tregulov, RSU. 32, 3 (2011) 169 .
- V V Tregulov, Phys. 59, 9 (2014) 1413.
- B L Sharma. Ser. Sci. Solid State 5 (1974).
- A A Lebedev and N A Sobolev, Sci. Forum (1997) 258.
- A Tataroglu, S Altindal, and I Dokme. Gazi Univ. J. Sci. 16, 4 (2003) 677.
- A A Nasirov, Surf. Eng. Appl. Electrochem. 44, 4 (2008) 339.
- U I Erkaboev, et al., J. Appl. Sci. Eng. 19, 2 (2022) 2021123.
- U I Erkaboev, R G Rakhimov, and N A Sayidov, Phys. Lett. B 35, 17 (2021) 2150293-1.
- G Gulyamov, M G Dadamirzaev, and S R Boidedaev, Semicond. 34, 3 (2000) 260.
- M Ahmetoglu (Afrailov), et al., J. Mod. Phys. B 23, 15 (2009) 3279.
- U I Erkaboev, et al., Indian J. Phys. 97, 4 (2023) 1061.
- U I Erkaboev, et al., Indian J. Phys. 98, 1 (2024) 189.
- G Gulyamov, et al., East Europ. J. of Phys. 2 (2023) 221.
- S H Shamirzaev, et al., Semicond. 45, 8 (2011) 1035.
- G Gulyamov, M G Dadamirzaev, and S R Boidedaev, Semicond. 34, 5 (2000) 555.
- G Gulyamov, M G Dadamirzaev, and M O Kosimova, J. Phys. 68, 1-2 (2023) 603.
- U I Erkaboev and R G Rakhimov. e-Prime - Adv. in Electr. Eng. Electron. Energy 5 (2023) 100236.
- U I Erkaboev and R G Rakhimov, e-J. Surf. Sci. Nanotechnol (2024) 98.
- S H. Shamirzaev, et al., Semicond. 43, 1 (2009) 47.
- G Gulyamov, et al., Nano- Electron. Phys. 12, 3 (2020) 03012.
- G Gulyamov, et al., Appl. Sci. Eng. 23, 3 (2020) 453.
- UErkaboev, et al., J. Mod. Phys. B. 37, 10 (2023) 2350015.
- G Gulyamov, et al., Phys. J. 12, 3 (2010) 143.
- G Gulyamov and N Y Sharibaev, Semicond. 45, 2 (2011) 174.
- U I Erkaboev, et al., Nano. 16, 9 (2021), 2150102.
- G Gulyamov, U I Erkaboev, and A G Gulyamov, Indian J. Phys. 93, 5 (2019) 639.
- G Gulyamov, U I Erkaboev, and A G Gulyamov. Nano- Electron. Phys. 11, 1 (2019) 01020.
- U I Erkaboev and R G Rakhimov. East Europ. J. Phys. 3 (2023) 133.
- U I Erkaboev, G Gulyamov, and R G Rakhimov. Indian J. Phys. 96, 8 (2022) 2359.
- U Erkaboev, et al., “AIP Conference Proceedings” (2023).
- U Erkaboev, et al., “AIP Conference Proceedings” (2023).
- U I Erkaboev, et al., “E3S Web Conferences” (2023).
- U I Erkaboev, et al., “E3S Web Conferences” (2023).
- G Gulyamov, et al., Phys. Lett. B. 37, 10 (2023) 2350015.
- U I Erkaboev, et al., Romanian J. Phys. 65, 5-6 (2023) 614.
- U I Erkaboev, et al., J. Mod. Phys. B. 34, 7 (2020) 2050052.
- G Gulyamov., et al., Mathemat. Res. 3,1 (2021) 5.
- J I Mirzaev. Bull. NamSU. 3, 6 (2021) 51.
- I A Vainshtein, A F Zatsepin and V S Kortov, Solid State 41, 6 (1999) 905.
- Yu R Nosov, V A Shilin, Moscow Sci. (1986) 362.
- G E Pikus, Moscow Sci. (1965) 448
- A V Rzhanov, Moscow Sci. (1972) 480
- B V Pavlyk, et al., Semicond. 45, 5 (2011) 599.
- R E Stahlbush, et al., IEEE Trans. Nucl. 39, 6 (1992) 2086.
- D Slobodzyan, et al., MDPI Mater. 5, 12 (2022) 4052.
- M Bruel, Lett. 31, 14 (1995) 1201.
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