Asymmetric features of various physical quantities in the normal and superconducting states between hole- and electron-doped cuprate high-temperature superconductors have been an issue of debate for a long time. Their exploration is very important for the understanding not only of the mechanism of high-Tc superconductivity but also of the nature of doped-Mott insulators. Presented in this review is the present status of theoretical understanding of the electronic states in hole- and electron-doped high- Tc cuprates as well as the origin of the electron-hole asymmetry of the electronic states. In particular, it is shown that numerically exact diagonalization calculations for small clusters in a t-J model with long-range hoppings, t and t nicely reproduce the electron-hole asymmetry observed experimentally in various quantities and thus make it possible to extract the physical origin of the asymmetry. These results give a deep insight on the asymmetric behaviors in hole- and electron-doped high-Tc cuprates and on the nature of doped Mott insulators.
Tohyama, T. (2019). Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints. Iranian Journal of Physics Research, 6(3), 232–232.
MLA
Tohyama, T. "Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints", Iranian Journal of Physics Research, 6, 3, 2019, 232–232.
HARVARD
Tohyama, T. (2019). 'Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints', Iranian Journal of Physics Research, 6(3), pp. 232–232.
CHICAGO
Tohyama, T., "Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints." Iranian Journal of Physics Research, 6 3 (2019): 232–232,
VANCOUVER
Tohyama T. Electron-hole asymmetry in high-Tc cuprates from theoretical viewpoints. Iranian Journal of Physics Research. 2019;6(3):232–232 (In Persian).
