In this article, we investigate the redistribution of implanted As+ ion and effect of it on the rate of oxide growth during steam oxidation of Si wafers at 900oC. Our results show that a highly enriched, thin layer of Arsenic forms at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase depending on the depth distribution and dose of the implanted impurity As. The thin As layer collected at the interface can be used in the design of shallow junctions. Rutherford Backscattering Spectroscopy(RBS) was used to investigate the oxide characteristics.
D. Agha-Ali-Gol, , A. Baghizadeh, and D. Fathi, (2019). Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si. Iranian Journal of Physics Research, 5(4), 243-248.
MLA
D. Agha-Ali-Gol, , , A. Baghizadeh, , and D. Fathi, . "Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si", Iranian Journal of Physics Research, 5, 4, 2019, 243-248.
HARVARD
D. Agha-Ali-Gol , A. Baghizadeh , D. Fathi (2019). 'Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si', Iranian Journal of Physics Research, 5(4), pp. 243-248.
CHICAGO
D. Agha-Ali-Gol, A. Baghizadeh and D. Fathi, "Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si," Iranian Journal of Physics Research, 5 4 (2019): 243-248,
VANCOUVER
D. Agha-Ali-Gol , A. Baghizadeh , D. Fathi Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si. Dear user; Recently we have changed our software to Sinaweb. If you had already registered with the old site, you may use the same USERNAME but you need to change your password. To do so at the first use, please choose, 2019; 5(4): 243-248.
