In this work, we study electronic transport properties of a quasi-one dimensional pure semi-conducting Zigzag Carbon Nanotube (CNT) attached to semi-infinite clean metallic Zigzag CNT leads, taking into account the influence of topological defect in junctions. This structure may behave like a field effect transistor. The calculations are based on the tight-binding model and Green’s function method, in which the local density of states(LDOS) in the metallic section to semi-conducting section, and muli-channel conductance of the system are calculated in the coherent and linear response regime, numerically. Also we have introduced a circuit model for the system and investigated its current. The theoretical results obtained, can be a base, for developments in designing nano-electronic devices.
Khoeini, F. & Farman, H. (2019). Electronic transport properties of carbon nanotube metal-semiconductor-metal. Iranian Journal of Physics Research, 8(3), 183–183.
MLA
Khoeini, F., & Farman, H. "Electronic transport properties of carbon nanotube metal-semiconductor-metal", Iranian Journal of Physics Research, 8, 3, 2019, 183–183.
HARVARD
Khoeini, F., & Farman, H. (2019). 'Electronic transport properties of carbon nanotube metal-semiconductor-metal', Iranian Journal of Physics Research, 8(3), pp. 183–183.
CHICAGO
Khoeini, F. & Farman, H., "Electronic transport properties of carbon nanotube metal-semiconductor-metal." Iranian Journal of Physics Research, 8 3 (2019): 183–183,
VANCOUVER
Khoeini F., Farman H. Electronic transport properties of carbon nanotube metal-semiconductor-metal. Iranian Journal of Physics Research. 2019;8(3):183–183 (In Persian).
