In this work, we study electronic transport properties of a quasi-one dimensional pure semi-conducting Zigzag Carbon Nanotube (CNT) attached to semi-infinite clean metallic Zigzag CNT leads, taking into account the influence of topological defect in junctions. This structure may behave like a field effect transistor. The calculations are based on the tight-binding model and Green’s function method, in which the local density of states(LDOS) in the metallic section to semi-conducting section, and muli-channel conductance of the system are calculated in the coherent and linear response regime, numerically. Also we have introduced a circuit model for the system and investigated its current. The theoretical results obtained, can be a base, for developments in designing nano-electronic devices.
Khoeini,F. and Farman,H. (2019). Electronic transport properties of carbon nanotube metal-semiconductor-metal. Iranian Journal of Physics Research, 8(3), 183-183.
MLA
Khoeini,F. , and Farman,H. . "Electronic transport properties of carbon nanotube metal-semiconductor-metal", Iranian Journal of Physics Research, 8, 3, 2019, 183-183.
HARVARD
Khoeini F., Farman H. (2019). 'Electronic transport properties of carbon nanotube metal-semiconductor-metal', Iranian Journal of Physics Research, 8(3), pp. 183-183.
CHICAGO
F. Khoeini and H. Farman, "Electronic transport properties of carbon nanotube metal-semiconductor-metal," Iranian Journal of Physics Research, 8 3 (2019): 183-183,
VANCOUVER
Khoeini F., Farman H. Electronic transport properties of carbon nanotube metal-semiconductor-metal. Dear user; Recently we have changed our software to Sinaweb. If you had already registered with the old site, you may use the same USERNAME but you need to change your password. To do so at the first use, please choose, 2019; 8(3): 183-183.
