Authors
Abstract
The normal state behavior of the Gd123 samples doped with vanadium has been studied. A metal-insulator transition in samples has been observed. The normal state resistivity has been compared with the variable range hoping model, which shows the 2D-VRH and CG having a better agreement for our samples. The localization length is calculated, which shows a decrease with doping, and for x=0.15 this drop is significant.
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