Document Type : Original Article
Authors
1 Department of Physics, Faculty of science, University of Sistan and Baluchestan, Zahedan, Iran
2 Faculty of science, Ferdowsi University, Mashhad, Iran
Abstract
In this research, electronic and thermoelectric properties of the two-dimensional monolayer of SnN-InO were investigated using density functional theory. The SnN-InO nanostructure is a two-dimensional hexagonal thermoelectric material with an indirect band gap of 0.5 eV. Using the electronic structure, we evaluated the thermoelectric transport coefficients such as the Seebeck coefficient which is the major determinant of thermoelectric properties, electrical conductivity, electronic thermal conductivity, and figure of merit. Calculations illustrate that the Seebeck coefficient declined to some extent with increasing temperature, and had the highest value in the range of Fermi level and negative energies. Another factor to consider is the variations of the figure of merit that are negligible compared to the temperature, so it has undergone changes of about 0.2 in the temperature range of 400K which are reasonable for practical applications. Therefore, the SnN-InO nanostructure can be considered as a qualified thermoelectric material with the figure of merit as 0.9 at room temperature.
Keywords
- the two-dimensional monolayer of SnN-InO
- density functional theory
- Seebeck coefficient
- figure of merit
Main Subjects
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