Growth and investigation of TiO2 and AlN nanostructureâs properties

A. Bahari,; K. Hasanzadeh,; M. Amir Sadeghi,; M. Roodbari,

Growth and investigation of TiO2 and AlN nanostructureâs properties

Authors

A. Bahari

K. Hasanzadeh

M. Amir Sadeghi

M. Roodbari

Abstract

We have grown TiO2 and AlN under ultra high vacuum and high pressure conditions and studied their structures with using AES and SEM techniques. The obtained results show that an amorphous film of TiO2 and AlN could be formed on silicon substrate. Furthermore, TiO2 and AlN are high – K dielectric materials and they can thus be replaced to ultra thin gate oxide film.

Keywords

semiconductor

thin film

CMOS

TiO2

AlN

synchrotron radiation

AES and SEM techniques