نوع مقاله : مقاله پژوهشی
نویسندگان
1 Namangan Institute of Engineering and Technology
2 Namangan Institute of Engineering and Technolofy
3 Namangan Institute of Engineering and Technology, Namangan, Uzbekistan
چکیده
In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, in the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated
کلیدواژهها
- Density of surface states
- magnetic field
- heterostructure
- deep levels
- capacitance-voltage characteristic
موضوعات
عنوان مقاله [English]
Simulation the effects of temperature and magnetic field on the density of surface states in semiconductor heterostructures
نویسندگان [English]
- Muzaffar Dadamirzaev 1
- Ulugbek Erkaboev 2
- Nosir Sharibaev 3
- Rustamjon Rakhimov 1
1 Namangan Institute of Engineering and Technology
2 Namangan Institute of Engineering and Technolofy
3 Namangan Institute of Engineering and Technology, Namangan, Uzbekistan
چکیده [English]
In this article, the physical properties of the surface of the CdS/Si(p) material under the influence of a magnetic field were studied . The dependence of the density of surface states of the p-type Si(p) semiconductor on the magnetic field and temperature has been studied. For the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. Mathematical modeling of processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, in the band gap of silicon. The possibility of calculating discrete energy levels is demonstrated
کلیدواژهها [English]
- Density of surface states
- magnetic field
- heterostructure
- deep levels
- capacitance-voltage characteristic
)