نوع مقاله : مقاله پژوهشی
نویسندگان
1 گروه فیزیک، دانشکده علوم پایه، دانشگاه ملایر، ملایر، ایران
2 - گروه فیزیک، دانشکده علوم پایه، دانشگاه شهرکرد، شهرکرد، ایران -پژوهشکده نانوتکنولوژی، دانشگاه، شهرکرد، ایران
کلیدواژهها
عنوان مقاله English
نویسندگان English
Light reflection is one of the main factors that reduces the efficiency of silicon solar cells. In conventional thick silicon cells, anti-reflection structures such as textured surfaces are used, but this method is not effective for new generation thin-film cells with a thickness of approximately 3 μm. In this study, silicon thin-film cells with a single anti-reflection layer (Si₃N₄) and a double anti-reflection layer (MgF₂/Si₃N₄) were simulated using the finite difference time domain (FDTD) numerical method. The results showed that, for the cell with a single-layer coating, the lowest reflection is achieved when the thickness of the Si₃N₄ layer is 62 nm. In the double-layer structure of MgF₂/Si₃N₄, the most optimal thicknesses were 112 and 62 nm, respectively. In addition, the electrical performance of the cell was carried out in two ideal (defect-free) and real (taking into account volumetric and surface defects) states. The electro-optical analysis showed that the presence of defects can reduce the cell efficiency by about 50% compared with the ideal state.
کلیدواژهها English
